UNDERLAP DEVICE MODELING AND Its PERFORMANCE INVESTIGATION

One of the advantages of SOI transistors compared to bulk devices is that at GHz frequencies, the substrate does not impact significantly on the behavior of transistors. Thanks to the thickness of the buried oxide, the body effect can be safely neglected at high frequency [4.1]. Thus, it is not necessary to develop a four terminal model for the SOI transistor used for RF applications. In this chapter, a non-quasi-static (NQS) small-signal equivalent circuit model of the designed SDE device is presented for high frequency applications by accounting its intrinsic and extrinsic parameters. The model parameters are extracted and their values are compared with available experimental results.